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IXTA2N80P
IXTU2N80P
IXTP2N80P
IXTY2N80P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-263 (IXTA) Outline
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 30 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
1.4
2.4
440
36
4.4
25
35
53
28
10.6
3.7
4.5
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
1.80 ° C/W
R thCS
(TO-220)
0.25
° C/W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
V GS = 0 V
2
A
I SM
V SD
t rr
Repetitive
I F = I S , V GS = 0 V, Pulse test
I F = 2 A, -di/dt = 100 A/ μ s,
650
6
1.5
A
V
ns
TO-220 (IXTP) Outline
V R = 100 V, V GS = 0 V
Note 1: Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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